| PART |
Description |
Maker |
| SSI32R5111M-8CL SSI32R5111R-4CL SSI32R5111RM-6CL |
8-Channel Disk Read/Write Circuit 8通道磁盘写电
4-Channel Disk/Tape Read/Write Circuit 4通道的磁磁带写电
6-Channel Read/Write Circuit 6通道写电
|
Electronic Theatre Controls, Inc.
HIROSE ELECTRIC Co., Ltd.
|
| SSI32R511-8F SSI32R516-6CH SSI32R516-6CL SSI32R516 |
4-Channel Disk/Tape Read/Write Circuit
8-Channel Disk Read/Write Circuit 8通道磁盘写电
6-Channel Read/Write Circuit 6通道写电
|
API Delevan
|
| AT28BV64B-25TC AT28BV64B-20PC AT28BV64B-20JI AT28B |
64K (8K x 8) Battery-Voltage?/a> Parallel EEPROM with Page Write and Software Data Protection
64K (8K x 8) Battery-Voltage⑩ Parallel EEPROM with Page Write and Software Data Protection
From old datasheet system
64K EEPROM with 64-Byte Page & Software Protection, 2.7-Volt
64K (8K x 8) Battery-Voltage Parallel EEPROM with Page Write and Software Data Protection
High Speed CMOS Logic Triple 3-Input OR Gates 14-SOIC -55 to 125 8K X 8 EEPROM 3V, 250 ns, PDSO28
64K (8K x 8) Battery-VoltageParallel EEPROM with Page Write and Software Data Protection 8K X 8 EEPROM 3V, 200 ns, PDSO28
|
ATMEL[ATMEL Corporation]
Atmel, Corp.
|
| BH6628AFS |
Magnetic Disk LSIs > FDD read/write amplifier
Read / Write amplifier for FDD
|
ROHM[Rohm]
|
| GS8170DW36AC GS8170DW36AC-250 GS8170DW36AC-350 GS8 |
18Mb B>1x1Dp CMOS I/O Double Late Write SigmaRAM
18Mb x1Dp CMOS I/O Double Late Write SigmaRAM 512K X 36 STANDARD SRAM, 2.1 ns, PBGA209
18Mb x1Dp CMOS I/O Double Late Write SigmaRAM 512K X 36 STANDARD SRAM, 1.8 ns, PBGA209
18Mb x1Dp CMOS I/O Double Late Write SigmaRAM 35.7x1Dp的CMOS的I / O双晚SigmaRAM
18Mb x1Dp CMOS I/O Double Late Write SigmaRAM 256K X 72 STANDARD SRAM, 1.8 ns, PBGA209
|
GSI Technology, Inc.
|
| GS8170DW36C-250 GS8170DW36C-250I GS8170DW36C-300 G |
250MHz 512K x 36 18MB double late write sigmaRAM SRAM
300MHz 512K x 36 18MB double late write sigmaRAM SRAM
333MHz 512K x 36 18MB double late write sigmaRAM SRAM
333MHz 256K x 72 18MB double late write sigmaRAM SRAM
|
GSI Technology
|
| VM720HN6SSJ VM720L2POJ |
6-Channel Read/Write Circuit
2-Channel Disk Read/Write Circuit 2通道磁盘写电
|
Advanced Semiconductor, Inc.
|
| HM64YLB36514BP-6H HM64YLB36514 |
16M Synchronous Late Write Fast Static RAM (512-kword × 36-bit, Register-Latch Mode)
16M Synchronous Late Write Fast Static RAM (512-kword 】 36-bit, Register-Latch Mode)
Memory>Fast SRAM>Late Write / High Speed Interface Synchronous SRAM
|
Renesas Electronics Corporation
|
| CXA3092N |
4ch. Read/Write Amplifier for Thin Film Head of
4ch. Read/Write Amplifier for Thin Film Head of Hard Disk Drive
From old datasheet system
|
SONY[Sony Corporation]
|
| 93LCS56 93LCS56-IP 93LCS56-ISL 93LCS56-ISM 93LCS56 |
2K/4K 2.5V Microwire Serial EEPROM with Software Write Protect
2K/4K 2.5V Microwire Serial EEPROM with Software Write Protect 2K/4K 2.5V的Microwire串行EEPROM，带有软件写保护
Connectors
XC95144 In-System Programmable CPLD
SERIAL ACCESS SPI BUS 4K 512 x 8 EEPROM
|
Microchip Technology, Inc.
Microchip Technology Inc.
Xilinx Inc
MICROCHIP[Microchip Technology]
ST Microelectronics
|
| VM117-2PO VM117-4PO VM117R-4PO VM117R-2PO |
2-Channel Disk Read/Write Circuit
4-Channel Disk/Tape Read/Write Circuit 4通道的磁磁带写电
|
Digital Data Communications GmbH
|
| HA166102T HA166102FP HA166104FP |
2-Channel Disk Read/Write Circuit 2通道磁盘写电
4-Channel Disk/Tape Read/Write Circuit
|
Glenair, Inc.
|
